Erbium Luminescence in Silicon

Przybylińska, H.; Jantsch, W.; Palmetshofer, L.

doi:10.12693/APhysPolA.90.83

Journal

Acta Physica Polonica A

1996 | 90 | 1 | 83-92

Article title

Erbium Luminescence in Silicon

Authors

H. Przybylińska , W. Jantsch , L. Palmetshofer

Content

Full texts:

http://przyrbwn.icm.edu.pl/APP/PDF/90/a090z1p08.pdf [remote]

Title variants

Languages of publication

Abstracts

We report on high resolution photoluminescence investigations of Er-implanted Si and demonstrate the variety of Er centers or complexes with impurities and native Si-defects formed depending on the processing parameters. These centers are shown to differ in the efficiency of excitation transfer as well as high temperature photoluminescence yield. The mechanisms responsible for the photoluminescence quenching at different temperature regimes are discussed.

Keywords

78.55.Hx

Discipline

78.55.Hx: Other solid inorganic materials

Publisher

Journal

Acta Physica Polonica A

Year

1996

Volume

Issue

Pages

83-92

Physical description

Dates

published

1996-07

Contributors

author

H. Przybylińska

Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

author

W. Jantsch

Johannes Kepler Universität, 4040 Linz, Austria

author

L. Palmetshofer

Johannes Kepler Universität, 4040 Linz, Austria

References

Document Type

Publication order reference

Identifiers

DOI

10.12693/APhysPolA.90.83

YADDA identifier

bwmeta1.element.bwnjournal-article-appv90z108kz