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1996 | 90 | 1 | 83-92
Article title

Erbium Luminescence in Silicon

Content
Title variants
Languages of publication
EN
Abstracts
EN
We report on high resolution photoluminescence investigations of Er-implanted Si and demonstrate the variety of Er centers or complexes with impurities and native Si-defects formed depending on the processing parameters. These centers are shown to differ in the efficiency of excitation transfer as well as high temperature photoluminescence yield. The mechanisms responsible for the photoluminescence quenching at different temperature regimes are discussed.
Keywords
EN
Publisher

Year
Volume
90
Issue
1
Pages
83-92
Physical description
Dates
published
1996-07
Contributors
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Johannes Kepler Universität, 4040 Linz, Austria
  • Johannes Kepler Universität, 4040 Linz, Austria
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv90z108kz
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