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Abstracts
We report on high resolution photoluminescence investigations of Er-implanted Si and demonstrate the variety of Er centers or complexes with impurities and native Si-defects formed depending on the processing parameters. These centers are shown to differ in the efficiency of excitation transfer as well as high temperature photoluminescence yield. The mechanisms responsible for the photoluminescence quenching at different temperature regimes are discussed.
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Pages
83-92
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Dates
published
1996-07
Contributors
author
- Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Johannes Kepler Universität, 4040 Linz, Austria
author
- Johannes Kepler Universität, 4040 Linz, Austria
References
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Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv90z108kz