Identification of the IB Emission Band in Al-Doped ZnS Crystals

• Authors: N. Liem , V. Quang , D. Thanh
• Languages of publication: EN

Abstracts

EN

Time-resolved luminescence spectroscopy and thermal lensing techniques are applied to the study of deep centre photoluminescence and absorption in Al-doped ZnS crystals, which are as-grown or heat treated in different Zn rich or S rich atmospheres. A blue emission band peaking at 2.89 eV has been identified as IB band in all the mentioned crystals. Parameters of the IB band at 300 K, 77 K and 10 K such as peak energy, half width of spectrum, radiative lifetime have been determined. The IB band exhibits some special properties such as a shift neither with increasing delay time nor with excitation intensity nor with sample temperatures as well as a superlinearly excitation intensity dependence of the luminescence. An energy diagram and electronic transitions in the IB centre are presented to explain the experimental results.

Keywords

EN

78.55.-m; 78.55.Et

Discipline

• 78.55.Et: II-VI semiconductors
• 78.55.-m: Photoluminescence, properties and materials(for time resolved luminescence, see 78.47.jd)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 89
• Issue: 5-6
• Pages: 717-726

Dates

published

1996-05

received

1996-02-19

(unknown)

1996-05-21

Contributors

author

N. Liem

• Institute of Material Science, Nghia do-Tu liem, Hanoi, Vietnam

author

V. Quang

• Institute of Material Science, Nghia do-Tu liem, Hanoi, Vietnam

author

D. Thanh

• Institute of Material Science, Nghia do-Tu liem, Hanoi, Vietnam

Identifiers

DOI

10.12693/APhysPolA.89.717