Transformation of AlGaAs/GaAs Interface under Hydrostatic Pressure

• Authors: J. Bąk-Misiuk , J. Domagała , J. Trela , M. Leszczyński , A. Misiuk , J. Hartwig , E. Prieur
• Languages of publication: EN

Abstracts

EN

AlGaAs layers grown by molecular beam epitaxy on GaAs substrates were investigated before and after high hydrostatic pressure (1.2 GPa) at high temperature (770 K) treatment (HP-HT treatment). An influence of HP-HT treatment on the properties of the AlGaAs/GaAs system was studied by lattice parameter measurements using the high resolution diffractometer and by X-ray topography. Observed changes in the lattice parameter of the AlGaAs layers after HP-HT treatment are related to the strain relaxation and explained by the creation of misfit dislocations and other extended defects which are visible on the topographs.

Keywords

EN

81.40.-z; 65.70.+y

Discipline

• 81.40.-z: Treatment of materials and its effects on microstructure, nanostructure, and properties

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 89
• Issue: 3
• Pages: 405-409

Dates

published

1996-03

Contributors

author

J. Bąk-Misiuk

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

J. Domagała

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

J. Trela

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

M. Leszczyński

• High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

author

A. Misiuk

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

J. Hartwig

• European Synchrotron Radiation Facility, BP220, 38043 Grenoble Cedex, France

author

E. Prieur

• European Synchrotron Radiation Facility, BP220, 38043 Grenoble Cedex, France

Identifiers

DOI

10.12693/APhysPolA.89.405