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1996 | 89 | 3 | 405-409
Article title

Transformation of AlGaAs/GaAs Interface under Hydrostatic Pressure

Content
Title variants
Languages of publication
EN
Abstracts
EN
AlGaAs layers grown by molecular beam epitaxy on GaAs substrates were investigated before and after high hydrostatic pressure (1.2 GPa) at high temperature (770 K) treatment (HP-HT treatment). An influence of HP-HT treatment on the properties of the AlGaAs/GaAs system was studied by lattice parameter measurements using the high resolution diffractometer and by X-ray topography. Observed changes in the lattice parameter of the AlGaAs layers after HP-HT treatment are related to the strain relaxation and explained by the creation of misfit dislocations and other extended defects which are visible on the topographs.
Keywords
EN
Year
Volume
89
Issue
3
Pages
405-409
Physical description
Dates
published
1996-03
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv89z319kz
Identifiers
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