Transformation of AlGaAs/GaAs Interface under Hydrostatic Pressure
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AlGaAs layers grown by molecular beam epitaxy on GaAs substrates were investigated before and after high hydrostatic pressure (1.2 GPa) at high temperature (770 K) treatment (HP-HT treatment). An influence of HP-HT treatment on the properties of the AlGaAs/GaAs system was studied by lattice parameter measurements using the high resolution diffractometer and by X-ray topography. Observed changes in the lattice parameter of the AlGaAs layers after HP-HT treatment are related to the strain relaxation and explained by the creation of misfit dislocations and other extended defects which are visible on the topographs.
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