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1996 | 89 | 3 | 405-409
Article title

Transformation of AlGaAs/GaAs Interface under Hydrostatic Pressure

Content
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Languages of publication
EN
Abstracts
EN
AlGaAs layers grown by molecular beam epitaxy on GaAs substrates were investigated before and after high hydrostatic pressure (1.2 GPa) at high temperature (770 K) treatment (HP-HT treatment). An influence of HP-HT treatment on the properties of the AlGaAs/GaAs system was studied by lattice parameter measurements using the high resolution diffractometer and by X-ray topography. Observed changes in the lattice parameter of the AlGaAs layers after HP-HT treatment are related to the strain relaxation and explained by the creation of misfit dislocations and other extended defects which are visible on the topographs.
Keywords
EN
Publisher

Year
Volume
89
Issue
3
Pages
405-409
Physical description
Dates
published
1996-03
Contributors
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
  • High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • European Synchrotron Radiation Facility, BP220, 38043 Grenoble Cedex, France
author
  • European Synchrotron Radiation Facility, BP220, 38043 Grenoble Cedex, France
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv89z319kz
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