EN
In this paper we discuss a possibility of an optical characterization of thin semiconductor epilayers by Raman scattering measurements. As an example zinc blende Cd_{1-x}Mn_{x}Te epilayers (0.66 ≤ x ≤ 1.0) have been grown by molecular beam epitaxy method and investigated by Raman scattering and X-ray diffraction. Information resulting from both methods is compared and discussed.