Investigation of Near Surface Distortions in Si Single Crystals by Means of Spatial Distribution Analysis of Reflected Beams

• Authors: V. Khrupa , S. Krasulya , V. Machulin , L. Datsenko , J. Auleytner
• Languages of publication: EN

Abstracts

EN

A diffractometrical method for quantitative evaluation of structure perfection level in silicon single crystals containing various types of near surface distortions is described. The method is based on the spatial distribution analysis of the reflected intensity in the Bragg case of diffraction. To implement the proposed approach one has to satisfy the condition of the so-called low X-ray absorption because in this case the penetration depth of diffracted radiation exceeds the corresponding value of extinction length. It permits us to obtain a remarkable value of noncoherent reflectivity due to defects placed in deep (on the extension of absorption length) regions of a crystal and therefore, to increase the sensitivity of scattering for low distortions of crystal lattice. Using the method described here the extension of various disturbed layers as well as the level of the static Debye-Waller factor of a crystal can be determined. The effect of surface distortions caused by mechanical treatment and the influence of the following thermal annealing as well as irradiation by high energy protons on the defective structure of the samples were investigated.

Keywords

EN

81.40.-z; 61.10.-i

Discipline

• 81.40.-z: Treatment of materials and its effects on microstructure, nanostructure, and properties

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 89
• Issue: 3
• Pages: 309-313

Dates

published

1996-03

Contributors

author

V. Khrupa

• Institute of Semiconductor Physics, National Academy of Sciences, Pr. Nauki, 252028 Kiev, Ukraine

author

S. Krasulya

• Institute of Semiconductor Physics, National Academy of Sciences, Pr. Nauki, 252028 Kiev, Ukraine

author

V. Machulin

• Institute of Semiconductor Physics, National Academy of Sciences, Pr. Nauki, 252028 Kiev, Ukraine

author

L. Datsenko

• Institute of Semiconductor Physics, National Academy of Sciences, Pr. Nauki, 252028 Kiev, Ukraine

author

J. Auleytner

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

Identifiers

DOI

10.12693/APhysPolA.89.309