X-ray Diffraction Investigations of Structure of Silicon Single Crystals after Irradiation by Heavy Ions

• Authors: J. Auleytner , V. Khrupa , L. Datsenko , S. Krasulya , M. Skorokhod
• Languages of publication: EN

Abstracts

EN

Structure distortions appearing near the surfaces of crystals irradiated by high energy ions (H, Kr, U) accelerated till energy of several MeV using respectively the accelerator U-120 (Kiev, Ukraine), the heavy ions accelerators (Caen, France and Darmstadt, Germany) were investigated by means of various X-ray diffraction methods (topography and diffractometry). Nonhomogeneous distribution of lattice distortions near the surfaces of irradiated crystals were discovered using these methods in all of the samples. Besides the barrier zones where the accelerated ions stopped, the wide distorted regions situated nearer the surface were found. The fine structure of different zones, their extents as well as the level of static Debye-Waller factor were determined. The depth distribution of this factor was compared with the results obtained by using the edge contrast measurements some years ago. This permitted us to draw conclusions about some relaxation of elastic strains in the interference regions after many years.

Keywords

EN

81.40.-z; 68.35.Bs

Discipline

• 81.40.-z: Treatment of materials and its effects on microstructure, nanostructure, and properties

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 89
• Issue: 3
• Pages: 301-307

Dates

published

1996-03

Contributors

author

J. Auleytner

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

V. Khrupa

• Institute of Semiconductor Physics, National Academy of Sciences, Kiev, Ukraine

author

L. Datsenko

• Institute of Semiconductor Physics, National Academy of Sciences, Kiev, Ukraine

author

S. Krasulya

• Institute of Semiconductor Physics, National Academy of Sciences, Kiev, Ukraine

author

M. Skorokhod

• Institute of Semiconductor Physics, National Academy of Sciences, Kiev, Ukraine

Identifiers

DOI

10.12693/APhysPolA.89.301