High Resolution X-ray Reciprocal Space Mapping

• Authors: G. Bauer , J. Li , V. Holy
• Languages of publication: EN

Abstracts

EN

A survey will be given on recent advances in the investigation of semiconductor epilayers, heterostructures and superlattices using reciprocal space mapping techniques based on triple-axis diffractometry. It is shown that X-ray reciprocal space mapping yields quantitative information on strain, strain relaxation, as well as composition in such structures. These data are obtained from analyses of the isointensity contours of scattered X-ray intensity around reciprocal lattice points. Further analysis of the diffuse scattering yields also information on defect distribution in the epilayers.

Keywords

EN

61.10.-i; 68.55.-a; 61.72.Lk

Discipline

• 61.72.Lk: Linear defects: dislocations, disclinations
• 68.55.-a: Thin film structure and morphology(for methods of thin film deposition, film growth and epitaxy, see 81.15.-z)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1996
• Volume: 89
• Issue: 2
• Pages: 115-127

Dates

published

1996-02

Contributors

author

G. Bauer

• Institut für Halbleiterphysik, Johannes Kepler Universität, Linz, 4040 Austria

author

J. Li

• Institut für Halbleiterphysik, Johannes Kepler Universität, Linz, 4040 Austria

author

V. Holy

• Faculty of Science, Masaryk University, 61137 Brno, Czech Republic

Identifiers

DOI

10.12693/APhysPolA.89.115