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1996 | 89 | 2 | 115-127
Article title

High Resolution X-ray Reciprocal Space Mapping

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Content
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Languages of publication
EN
Abstracts
EN
A survey will be given on recent advances in the investigation of semiconductor epilayers, heterostructures and superlattices using reciprocal space mapping techniques based on triple-axis diffractometry. It is shown that X-ray reciprocal space mapping yields quantitative information on strain, strain relaxation, as well as composition in such structures. These data are obtained from analyses of the isointensity contours of scattered X-ray intensity around reciprocal lattice points. Further analysis of the diffuse scattering yields also information on defect distribution in the epilayers.
Keywords
EN
Year
Volume
89
Issue
2
Pages
115-127
Physical description
Dates
published
1996-02
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv89z201kz
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