Acceptor in Quantum Dot in Cubic Semiconductors

• Authors: P. Janiszewski , M. Suffczyński
• Languages of publication: EN

Abstracts

EN

Energy levels and oscillator strengths for transitions between the low­est states of an acceptor in a quantum dot of finite potential barrier in cubic semiconductors have been computed in the effective-mass approxima­tion. The degeneracy of the valence band in cubic semiconductors was taken into account in the spherical approximation. Variational envelope functions consisted of a finite basis of exponentials, and had to satisfy appropriate boundary conditions to ensure the hermiticity of the Hamiltonian matrix. In typical cubic semiconductors we have found enhanced values, by an order of magnitude, of oscillator strengths for the acceptor optical transitions in the dots of radii comparable to the acceptor diameter.

Keywords

EN

78.66.Fd; 73.61.Ey; 73.20.Dx

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 88
• Issue: 6
• Pages: 1171-1177

Dates

published

1995-12

received

1995-07-18

Contributors

author

P. Janiszewski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

M. Suffczyński

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland