Surface Potential Investigations of Indium Phosphate Real Surfaces by Means of Transverse Acoustoelectric Method

• Authors: T. Pustelny
• Languages of publication: EN

Abstracts

EN

A method of surface potential determination in semiconductors by means of the transverse acoustoelectric effect is described. The results of theoreti­cal analysis of the transverse acoustoelectric voltage versus surface potential and different surface electrical parameters in indium phosphate single crys­tals are presented. The experimental results of the surface potential inves­tigations have been obtained after various surface treatments in InP(110) and InP(100) crystals. A strong influence of the chemical and mechanical surface treatments upon the surface potential values has been observed from the measurements. The surface InP(110) was more sensitive to different sur­face treatments. The changes of the surface potential values were about two times greater for InP(110) than for InP(100) samples. The surface potentials after surface treatments obtained by the acoustics method were of the range -0.08 [V] to -0.22 [V].

Keywords

EN

73.20.-r; 43.35.+d; 72.50.+b

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 88
• Issue: 6
• Pages: 1123-1132

Dates

published

1995-12

received

1995-01-03

(unknown)

1995-05-10

(unknown)

1995-08-16

Contributors

author

T. Pustelny

• Institute of Physics, Silesian Technical University, Krzywoustego 2, 44-100 Gliwice, Poland