Title variants
Languages of publication
Abstracts
A method of surface potential determination in semiconductors by means of the transverse acoustoelectric effect is described. The results of theoretical analysis of the transverse acoustoelectric voltage versus surface potential and different surface electrical parameters in indium phosphate single crystals are presented. The experimental results of the surface potential investigations have been obtained after various surface treatments in InP(110) and InP(100) crystals. A strong influence of the chemical and mechanical surface treatments upon the surface potential values has been observed from the measurements. The surface InP(110) was more sensitive to different surface treatments. The changes of the surface potential values were about two times greater for InP(110) than for InP(100) samples. The surface potentials after surface treatments obtained by the acoustics method were of the range -0.08 [V] to -0.22 [V].
Journal
Year
Volume
Issue
Pages
1123-1132
Physical description
Dates
published
1995-12
received
1995-01-03
(unknown)
1995-05-10
(unknown)
1995-08-16
Contributors
author
- Institute of Physics, Silesian Technical University, Krzywoustego 2, 44-100 Gliwice, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z609kz