Plasma Edge Modification in Strongly Compensated Semiconductors

• Authors: W. Szuszkiewicz , K. Dybko , W. Bardyszewski , C. Julien
• Languages of publication: EN

Abstracts

EN

We demonstrate that the electron-impurity interaction can modify the reflectivity in the vicinity of plasma minimum giving rise to a small dip on the plasma edge. Experimental spectra taken for Hg_{1-x}Co_{x}Se for x < 0.02 at various temperatures confirm this theoretical prediction. The position of the structure can be used to determine the plasma frequency in highly compensated materials at low temperatures.

Keywords

EN

72.30.+q; 71.45.Gm; 78.30.Fs

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 88
• Issue: 5
• Pages: 1048-1052

Dates

published

1995-11

Contributors

author

W. Szuszkiewicz

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

K. Dybko

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

W. Bardyszewski

• Institute of Theoretical Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

C. Julien

• Laboratoire de Physique des Solides, Université Pierre et Marie Curie, 4, pl. Jussieu, 75252 Paris, Cedex 05, France