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1995 | 88 | 5 | 1048-1052
Article title

Plasma Edge Modification in Strongly Compensated Semiconductors

Content
Title variants
Languages of publication
EN
Abstracts
EN
We demonstrate that the electron-impurity interaction can modify the reflectivity in the vicinity of plasma minimum giving rise to a small dip on the plasma edge. Experimental spectra taken for Hg_{1-x}Co_{x}Se for x < 0.02 at various temperatures confirm this theoretical prediction. The position of the structure can be used to determine the plasma frequency in highly compensated materials at low temperatures.
Keywords
EN
Year
Volume
88
Issue
5
Pages
1048-1052
Physical description
Dates
published
1995-11
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z554kz
Identifiers
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