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1995 | 88 | 5 | 1048-1052
Article title

Plasma Edge Modification in Strongly Compensated Semiconductors

Content
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EN
Abstracts
EN
We demonstrate that the electron-impurity interaction can modify the reflectivity in the vicinity of plasma minimum giving rise to a small dip on the plasma edge. Experimental spectra taken for Hg_{1-x}Co_{x}Se for x < 0.02 at various temperatures confirm this theoretical prediction. The position of the structure can be used to determine the plasma frequency in highly compensated materials at low temperatures.
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EN
Publisher

Year
Volume
88
Issue
5
Pages
1048-1052
Physical description
Dates
published
1995-11
Contributors
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
  • Institute of Theoretical Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • Laboratoire de Physique des Solides, Université Pierre et Marie Curie, 4, pl. Jussieu, 75252 Paris, Cedex 05, France
References
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Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z554kz
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