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1995 | 88 | 5 | 1028-1032
Article title

MBE Growth of YbTe on GaAs(100) and BaF_{2}(111) Substrates

Content
Title variants
Languages of publication
EN
Abstracts
EN
The structural properties of MBE grown YbTe layers were investigated by X-ray diffraction methods and photoluminescence measurements. YbTe films were grown on the ZnTe and CdTe buffer layers crystallised on the GaAs(100) 2° off oriented substrates and on the BaF_{2}(100) substrates. In the case of GaAs substrates the two-dimensional growth mode of YbTe was observed on reflection high energy electron diffraction picture. Results of the X-ray rocking curve and photoluminescence excitation measurements indicate that the structural properties of YbTe films are comparable to the properties of the MBE grown ZnTe and CdTe layers on the GaAs(100) substrates. The measured values of the YbTe lattice constant parallel and perpendicular to the growth plane show that the 1 μm thick layers are partially strained. The full width at half maximum values of the X-ray rocking curves are the smallest (900 arc seconds) for the YbTe films crystallised on the 2 μm thick CdTe bucher layer grown on the GaAs(100) substrate. In the case of BaF_{2}(111) substrate the two-dimensional MBE growth mode of YbTe was not observed.
Keywords
EN
Year
Volume
88
Issue
5
Pages
1028-1032
Physical description
Dates
published
1995-11
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z550kz
Identifiers
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