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We report a systematic study of the temperature variation of the energy [E_{0}(T)] and broadening parameter [Γ_{0}(T)] of the fundamental band gap of ZnSe in the range 27 K < T < 370 K using contactless electroreflectance. The obtained values of E_{0}(T) and Γ_{0}(T) have been fit to various semi-empirical expressions to obtain information about the exciton-phonon coupling in this system. The experimentally determined E_{0}(T) also is of significance for technological applications since it can be used to determine the operating temperature of ZnSe-based devices such as quantum well lasers.
Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York, Brooklyn, NY 11210 USA
Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York, Brooklyn, NY 11210 USA
Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York, Brooklyn, NY 11210 USA
Chemistry Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, City College of the City University of New York, New York, NY 10031 USA
Chemistry Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, City College of the City University of New York, New York, NY 10031 USA
Chemistry Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, City College of the City University of New York, New York, NY 10031 USA
Chemistry Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, City College of the City University of New York, New York, NY 10031 USA
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bwmeta1.element.bwnjournal-article-appv88z547kz
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