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1995 | 88 | 5 | 990-994
Article title

Optically Detected Cyclotron Resonance Studies of High Eelectron Mobility AlGaAs/GaAs Structures

Content
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Languages of publication
EN
Abstracts
EN
Optically detected cyclotron resonance is used for the identification of recombination transitions of two-dimensional electron gas in A1GaAs/GaAs heterostructures. Two photoluminescence emissions are attributed to the recombination of the two-dimensional electron gas. These are the so-called H-band and the Fermi level singularity photoluminescence. Optical detection of cyclotron resonance is related to the change of the band bending across the GaAs active layer and the AlGaAs barrier, which is caused by impact ionization of shallow donors in the barrier region. Influence of a long range carrier scattering on ionized impurities on a mobility of the two-dimensional carriers is studied.
Keywords
Publisher

Year
Volume
88
Issue
5
Pages
990-994
Physical description
Dates
published
1995-11
Contributors
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Dept. of Physics and Meas. Technol., Linköping Univ., 581 83 Linköping, Sweden
author
  • Dept. of Physics, Chalmers Univ. of Technol., Göteborg, Sweden
  • Van der Waals-Zeeman Lab., Univ. of Amsterdam, Amsterdam, The Netherlands
  • Van der Waals-Zeeman Lab., Univ. of Amsterdam, Amsterdam, The Netherlands
  • Van der Waals-Zeeman Lab., Univ. of Amsterdam, Amsterdam, The Netherlands
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
References
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Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z542kz
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