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1995 | 88 | 5 | 977-981
Article title

Experimental Control of the Number of Ionized Donors in an AlGaAs/GaAs Heterostructure

Content
Title variants
Languages of publication
EN
Abstracts
EN
The high mobility of electrons in AlGaAs-GaAs heterostructures relies on the concept of modulation doping. As a sample is cooled down to T = 4.2 K under a fixed gate bias the number of ionized donors can be frozen and is then independent on the gate potential. We discuss the consequences of this procedure on the electron density and mobility in a two-dimensional electron gas. For a laterally patterned sample we find that the amplitude of the potential modulation can be maximized for a given carrier density by a suitably chosen cool-down voltage.
Keywords
EN
Publisher

Year
Volume
88
Issue
5
Pages
977-981
Physical description
Dates
published
1995-11
Contributors
author
  • Sektion Physik, LMU München, 80539 München, Germany
author
  • Sektion Physik, LMU München, 80539 München, Germany
author
  • Sektion Physik, LMU München, 80539 München, Germany
author
  • Dept. of Electronics, University of Glasgow, United Kingdom
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z539kz
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