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Number of results
1995 | 88 | 5 | 974-976

Article title

GaSb Dots Grown on GaAs Surface by Metalorganic Chemical Vapour Deposition

Content

Title variants

Languages of publication

EN

Abstracts

EN
We report metaloorganic chemical vapour deposition growth of an anisotropic GaSb islands on GaAs (001) surface with a typical dimensions around 200 nm. Results of investigations employing scanning electron microscope, scanning tunnelling microscope and ph9tocapacitance are presented.

Keywords

EN

Year

Volume

88

Issue

5

Pages

974-976

Physical description

Dates

published
1995-11

Contributors

author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • Department of Solid State Physics, University of Łódź, Pomorska 149/153, 90-236 Łódź, Poland
author
  • Department of Solid State Physics, University of Łódź, Pomorska 149/153, 90-236 Łódź, Poland
  • Department of Chemistry, Technical University of Warsaw, Koszykowa 75, 00-662 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

References

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv88z538kz
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