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1995 | 88 | 5 | 974-976
Article title

GaSb Dots Grown on GaAs Surface by Metalorganic Chemical Vapour Deposition

Content
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EN
Abstracts
EN
We report metaloorganic chemical vapour deposition growth of an anisotropic GaSb islands on GaAs (001) surface with a typical dimensions around 200 nm. Results of investigations employing scanning electron microscope, scanning tunnelling microscope and ph9tocapacitance are presented.
Keywords
EN
Publisher

Year
Volume
88
Issue
5
Pages
974-976
Physical description
Dates
published
1995-11
Contributors
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • Department of Solid State Physics, University of Łódź, Pomorska 149/153, 90-236 Łódź, Poland
author
  • Department of Solid State Physics, University of Łódź, Pomorska 149/153, 90-236 Łódź, Poland
  • Department of Chemistry, Technical University of Warsaw, Koszykowa 75, 00-662 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
References
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Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z538kz
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