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Number of results
1995 | 88 | 5 | 965-968

Article title

Electroepitaxial Growth of GaSb and AlGaSb Thick Epitaxial Layers

Content

Title variants

Languages of publication

EN

Abstracts

EN
Semi-bulk epitaxial layers of GaSb and AlGaSb up to 3 and 1 mm thick, respectively, were successfully grown by the liquid phase electroepitaxy on GaSb substrates. The growth procedure allowed us to achieve high crystallographic perfection as well as compositional uniformity of ternary layers.

Keywords

EN

Year

Volume

88

Issue

5

Pages

965-968

Physical description

Dates

published
1995-11

Contributors

  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

References

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv88z536kz
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