Title variants
Languages of publication
Abstracts
Semi-bulk epitaxial layers of GaSb and AlGaSb up to 3 and 1 mm thick, respectively, were successfully grown by the liquid phase electroepitaxy on GaSb substrates. The growth procedure allowed us to achieve high crystallographic perfection as well as compositional uniformity of ternary layers.
Journal
Year
Volume
Issue
Pages
965-968
Physical description
Dates
published
1995-11
Contributors
author
- Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
- Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z536kz