PL EN


Preferences help
enabled [disable] Abstract
Number of results
1995 | 88 | 5 | 965-968
Article title

Electroepitaxial Growth of GaSb and AlGaSb Thick Epitaxial Layers

Content
Title variants
Languages of publication
EN
Abstracts
EN
Semi-bulk epitaxial layers of GaSb and AlGaSb up to 3 and 1 mm thick, respectively, were successfully grown by the liquid phase electroepitaxy on GaSb substrates. The growth procedure allowed us to achieve high crystallographic perfection as well as compositional uniformity of ternary layers.
Keywords
EN
Publisher

Year
Volume
88
Issue
5
Pages
965-968
Physical description
Dates
published
1995-11
Contributors
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z536kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.