Electroepitaxial Growth of GaSb and AlGaSb Thick Epitaxial Layers

Zytkiewicz, Z.R.; Dobosz, D.

Journal

Acta Physica Polonica A

1995 | 88 | 5 | 965-968

Article title

Electroepitaxial Growth of GaSb and AlGaSb Thick Epitaxial Layers

Authors

Z.R. Zytkiewicz , D. Dobosz

Content

Full texts:

http://przyrbwn.icm.edu.pl/APP/PDF/88/a088z5p36.pdf [remote]

Title variants

Languages of publication

Abstracts

Semi-bulk epitaxial layers of GaSb and AlGaSb up to 3 and 1 mm thick, respectively, were successfully grown by the liquid phase electroepitaxy on GaSb substrates. The growth procedure allowed us to achieve high crystallographic perfection as well as compositional uniformity of ternary layers.

Keywords

68.55.Df 81.10.Dn

Publisher

Institute of Physics, Polish Academy of Sciences

Journal

Acta Physica Polonica A

Year

1995

Volume

Issue

Pages

965-968

Physical description

Dates

published

1995-11

Contributors

author

Z.R. Zytkiewicz

Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

D. Dobosz

Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

References

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv88z536kz