Deep Electron Traps in CdTe:In Films Grown by Molecular Beam Epitaxy

• Authors: A. Żakrzewski , L. Dobaczewski , G. Karczewski , T. Wojtowicz , J. Kossut
• Languages of publication: EN

Abstracts

EN

N-type indium doped CdTe grown on n^{+}-GaAs by molecular beam epitaxy has been studied by the standard deep level transient spectroscopy and the isothermal Laplace-transform deep level transient spectroscopy. It was found that the Cd/Te flux ratio strongly influences the deep level transient spectroscopy results. The unusual temperature dependence of the electron emission rate in films grown at nearly stoichiometric conditions may point out that the observed defect is resonant with the conduction band.

Keywords

EN

68.55.Ln; 73.61.Ga

• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 88
• Issue: 5
• Pages: 961-964

Dates

published

1995-11

Contributors

author

A. Żakrzewski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

L. Dobaczewski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

G. Karczewski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

T. Wojtowicz

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

J. Kossut

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland