EN
We present Hall effect and resistivity measurements as a function of pressure performed on MBE-grown Cd_{1-x}Mn_{x}Te (with x = 0.14) layer (1 μm) doped with bromine. The experimental data were analysed using positive and negative U model of the Br centres. We found that both models could reproduce the experimental points, but in the case of positive U model - only under assumption that the sample was completely uncompensated.