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1995 | 88 | 5 | 917-920
Article title

Stability and Band Offsets of Heterovalent SiC/GaN Interfaces

Content
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Languages of publication
EN
Abstracts
EN
We present first-principles calculations of structural and electronic properties of heterovalent SiC/GaN [001] interfaces. We have investigated interfaces consisting of one and two mixed layers with lateral c(2 × 2), 2 × 1, 1 × 2, 2 × 2 arrangements. Abrupt polar [001] interfaces are energetically unstable with respect to reconstruction. The preferred bonding configurations are found to be Si-N and Ga-C, which correspond to cation-anion bonding. The valence band offsets of the energetically most favorable structures are 1.39 eV for the interface with a mixed Ga/Si layer and 0.45 eV with a mixed C/N layer, with the top of the valence band lying higher in SiC.
Keywords
EN
Publisher

Year
Volume
88
Issue
5
Pages
917-920
Physical description
Dates
published
1995-11
Contributors
author
  • Physics Department and Walter Schottky Institute, Technical University Munich, Am Coulombwall, 85748 Garching, Germany
author
  • Physics Department and Walter Schottky Institute, Technical University Munich, Am Coulombwall, 85748 Garching, Germany
author
  • Physics Department and Walter Schottky Institute, Technical University Munich, Am Coulombwall, 85748 Garching, Germany
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z524kz
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