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1995 | 88 | 5 | 905-908
Article title

Metastability of Localized Neutral Donor State In GaAs

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EN
Abstracts
EN
Investigations of the photoconductivity of GaAs:Ge under hydrostatic pressure show, in addition to the well known persistent photoconductivity due to the DX state, another giant photoconductivity caused by a neutral localised "A₁" state of the donor. We find that the top of the barrier for the electron recapture to the Α₁ state is pinned to the conduction band edge and the capture cross-section σ(T → ∞) is surprisingly small.
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EN
Publisher

Year
Volume
88
Issue
5
Pages
905-908
Physical description
Dates
published
1995-11
Contributors
  • Johannes-Kepler-Universität, 4040 Linz, Austria
author
  • Johannes-Kepler-Universität, 4040 Linz, Austria
author
  • Johannes-Kepler-Universität, 4040 Linz, Austria
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Unipress, Polish Academy of Sciences, Sokołowska 29, 01-142 Warszawa, Poland
References
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Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z521kz
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