Gain and Dark Current Studies on Planar Photodetectors Made on Annealed GaAs-on-Si

• Authors: F. Riesz , Vo Van Tuven , J. Varrio
• Languages of publication: EN

Abstracts

EN

Interdigital, planar photodetectors were fabricated from annealed GaAs/Si heterostructures grown by molecular beam epitaxy using alloyed AuGe/Ni and non-alloyed Cr/Au contacts. The dark current and optical gain of the Cr/Au devices is higher than that of the AuGe/Ni devices. Contact degradation due to annealing and a p-like background doping consistently explains our data. The gain-optical power relationship follows a power law with an exponent close to -1.

Keywords

EN

85.60.Gz; 73.50.Pz; 73.40.Sx

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 88
• Issue: 5
• Pages: 889-892

Dates

published

1995-11

Contributors

author

F. Riesz

• Research Institute for Technical Physics of the Hungarian Academy of Sciences, P.O. Box 76, 1325 Budapest, Hungary

author

Vo Van Tuven

• Research Institute for Technical Physics of the Hungarian Academy of Sciences, P.O. Box 76, 1325 Budapest, Hungary

author

J. Varrio

• Department of Physics, Tampere University of Technology, P.O. Box 692, 33101 Tampere, Finland