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1995 | 88 | 5 | 889-892
Article title

Gain and Dark Current Studies on Planar Photodetectors Made on Annealed GaAs-on-Si

Content
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Languages of publication
EN
Abstracts
EN
Interdigital, planar photodetectors were fabricated from annealed GaAs/Si heterostructures grown by molecular beam epitaxy using alloyed AuGe/Ni and non-alloyed Cr/Au contacts. The dark current and optical gain of the Cr/Au devices is higher than that of the AuGe/Ni devices. Contact degradation due to annealing and a p-like background doping consistently explains our data. The gain-optical power relationship follows a power law with an exponent close to -1.
Keywords
EN
Publisher

Year
Volume
88
Issue
5
Pages
889-892
Physical description
Dates
published
1995-11
Contributors
author
  • Research Institute for Technical Physics of the Hungarian Academy of Sciences, P.O. Box 76, 1325 Budapest, Hungary
author
  • Research Institute for Technical Physics of the Hungarian Academy of Sciences, P.O. Box 76, 1325 Budapest, Hungary
author
  • Department of Physics, Tampere University of Technology, P.O. Box 692, 33101 Tampere, Finland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z517kz
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