Stabilization of the Distorted Configuration of the EL2 Defect Induced by the Free Electron Capture in GaAsP

• Authors: J. Przybytek , M. Baj , T. Słupiński
• Languages of publication: EN

Abstracts

EN

Our results of optical absorption, electronic transport and deep level transient spectroscopy measurements performed on n-type GaAs_{1-x}P_{x} (x ≈ 0.2) strongly suggest that using both an enlarged-gap material (compared to GaAs) and hydrostatic pressure we can push down the acceptor level of the distorted configuration of the EL2 defect, (EL2*)^{–/0}, sufficiently low into the gap that the distorted configuration of the EL2 defect, EL2*, becomes stabilized.

Keywords

EN

71.55.Eq

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 88
• Issue: 5
• Pages: 881-884

Dates

published

1995-11

Contributors

author

J. Przybytek

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

M. Baj

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

T. Słupiński

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland