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1995 | 88 | 5 | 881-884
Article title

Stabilization of the Distorted Configuration of the EL2 Defect Induced by the Free Electron Capture in GaAsP

Content
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Languages of publication
EN
Abstracts
EN
Our results of optical absorption, electronic transport and deep level transient spectroscopy measurements performed on n-type GaAs_{1-x}P_{x} (x ≈ 0.2) strongly suggest that using both an enlarged-gap material (compared to GaAs) and hydrostatic pressure we can push down the acceptor level of the distorted configuration of the EL2 defect, (EL2*)^{–/0}, sufficiently low into the gap that the distorted configuration of the EL2 defect, EL2*, becomes stabilized.
Keywords
EN
Publisher

Year
Volume
88
Issue
5
Pages
881-884
Physical description
Dates
published
1995-11
Contributors
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
author
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
  • Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z515kz
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