Optically Active Centers in Er-Implanted Silicon

• Authors: H. Przybylińska , W. Jantsch , G. Hendorfer , L. Palmetshofer , R.J. Wilson , B.J. Sealy
• Languages of publication: EN

Abstracts

EN

We show that of all the optically active Er centers in silicon found after ion implantation and optimum annealing (900°C) the isolated cubic interstitial Er is the dominant PL center above 100 K. At lower anneal temperatures ( ≈ 600°C) with later rapid thermal anneal at 900°C oxygen related centers also emit.

Keywords

EN

78.55.Hx

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 88
• Issue: 5
• Pages: 877-880

Dates

published

1995-11

Contributors

author

H. Przybylińska

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

W. Jantsch

• Institut für Experimentalphysik, Johannes Kepler Universität, 4040 Linz-Auhof, Austria

author

G. Hendorfer

• Institut für Experimentalphysik, Johannes Kepler Universität, 4040 Linz-Auhof, Austria

author

L. Palmetshofer

• Institut für Experimentalphysik, Johannes Kepler Universität, 4040 Linz-Auhof, Austria

author

R.J. Wilson

• Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH, UK

author

B.J. Sealy

• Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH, UK