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1995 | 88 | 5 | 877-880
Article title

Optically Active Centers in Er-Implanted Silicon

Content
Title variants
Languages of publication
EN
Abstracts
EN
We show that of all the optically active Er centers in silicon found after ion implantation and optimum annealing (900°C) the isolated cubic interstitial Er is the dominant PL center above 100 K. At lower anneal temperatures ( ≈ 600°C) with later rapid thermal anneal at 900°C oxygen related centers also emit.
Keywords
EN
Year
Volume
88
Issue
5
Pages
877-880
Physical description
Dates
published
1995-11
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z514kz
Identifiers
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