Weak Localization and Electron-Electron Interaction in Si/SiGe Quantum Wells

• Authors: A. Prinz , G. Stőger , G. Brunthaler , G. Bauer , K. Ismail , B.S. Meyerson
• Languages of publication: EN

Abstracts

EN

A negative magnetoresistance is observed in Si/SiGe modulation doped heterostructures which is attributed to the single particle quantum interference (weak localization) effect. From analysis of the experimental data the electron phase coherence time τ_{ϕ} is extracted to follow a (aT + bT^{2} )^{-1} dependence. The evaluated prefactor α = 0.25 is below the theoretical limit of 0.5, but agrees with observations in Si and GaAs/AlGaAs heterostructures.

Keywords

EN

73.20.Fz

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 88
• Issue: 5
• Pages: 873-876

Dates

published

1995-11

Contributors

author

A. Prinz

• Institut für Halbleiterphysik, Johannes Kepler Universität, 4040 Linz, Austria

author

G. Stőger

• Institut für Halbleiterphysik, Johannes Kepler Universität, 4040 Linz, Austria

author

G. Brunthaler

• Institut für Halbleiterphysik, Johannes Kepler Universität, 4040 Linz, Austria

author

G. Bauer

• Institut für Halbleiterphysik, Johannes Kepler Universität, 4040 Linz, Austria

author

K. Ismail

• IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA

author

B.S. Meyerson

• IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA