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1995 | 88 | 5 | 873-876
Article title

Weak Localization and Electron-Electron Interaction in Si/SiGe Quantum Wells

Content
Title variants
Languages of publication
EN
Abstracts
EN
A negative magnetoresistance is observed in Si/SiGe modulation doped heterostructures which is attributed to the single particle quantum interference (weak localization) effect. From analysis of the experimental data the electron phase coherence time τ_{ϕ} is extracted to follow a (aT + bT^{2} )^{-1} dependence. The evaluated prefactor α = 0.25 is below the theoretical limit of 0.5, but agrees with observations in Si and GaAs/AlGaAs heterostructures.
Keywords
EN
Year
Volume
88
Issue
5
Pages
873-876
Physical description
Dates
published
1995-11
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z513kz
Identifiers
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