Gd 4f and 5d Electrons in Sn_{0.96}Gd_{0.04}Te Valence Band

• Authors: B.A. Orłowski , B.J. Kowalski , Z. Gołacki , T. Story , R.L. Johnson
• Languages of publication: EN

Abstracts

EN

The synchrotron radiation was applied to measure resonant photoemission spectra (Fano-type Gd 4d-4f resonance), constant initial states and constant final states to study the valence band electronic structure of Sn_{0.96}Gd_{0.04}Te crystal. The resonant energy was found equal to 150.3 eV. The electrons 4f were found to contribute to the valence band of the crystal with the maximum located at 9.5 eV below the valence band edge whereas 5d electrons contribute at the crystal valence band edge.

Keywords

EN

79.60.-i; 71.20.Fi

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 88
• Issue: 5
• Pages: 857-860

Dates

published

1995-11

Contributors

author

B.A. Orłowski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

B.J. Kowalski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

Z. Gołacki

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

T. Story

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

R.L. Johnson

• Universität Hamburg, II Institut Experimentalphysik, Luruper Chaussee 149, 22761 Hamburg 50, Germany