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1995 | 88 | 5 | 857-860
Article title

Gd 4f and 5d Electrons in Sn_{0.96}Gd_{0.04}Te Valence Band

Content
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Languages of publication
EN
Abstracts
EN
The synchrotron radiation was applied to measure resonant photoemission spectra (Fano-type Gd 4d-4f resonance), constant initial states and constant final states to study the valence band electronic structure of Sn_{0.96}Gd_{0.04}Te crystal. The resonant energy was found equal to 150.3 eV. The electrons 4f were found to contribute to the valence band of the crystal with the maximum located at 9.5 eV below the valence band edge whereas 5d electrons contribute at the crystal valence band edge.
Keywords
EN
Year
Volume
88
Issue
5
Pages
857-860
Physical description
Dates
published
1995-11
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z509kz
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