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1995 | 88 | 5 | 837-840
Article title

Lattice Constant of Doped Semiconductor

Content
Title variants
Languages of publication
EN
Abstracts
EN
The paper shows an influence of doping on lattice constant of a semiconductor. Three effects are discussed: (i) "size" effect caused by a different ionic radii of dopant and host atoms, (ii) lattice expansion by free electrons proportionally to the deformation potential of the conduction-band minimum occupied by this charge, (iii) different thermal expansion of the undoped and doped samples. The experiments have been performed by using the high resolution X-ray diffraction at 77-770 K on AlGaAs:Te and GaAs:Si.
Keywords
EN
Year
Volume
88
Issue
5
Pages
837-840
Physical description
Dates
published
1995-11
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z504kz
Identifiers
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