Non-Ohmic Conductivity of High Resistivity CdTe

• Authors: J. Łusakowski , J. Szczytkowski , K. Szadkowski , E. Kamińska , A. Piotrowska , G. Karczewski , T. Wojtowicz
• Languages of publication: EN

Abstracts

EN

Conductivity measurements were carried out at room temperature on samples of nominally undoped Bridgman, bulk crystals and MBE-grown lay­ers of CdTe. The samples were equipped with indium contacts which made it possible to determine the voltage distribution along the path of the cur­rent flow. The results show that for both types of CdTe almost all of the applied voltage drops in the vicinity of the positively biased contact. The resistance of the samples was shown not to depend on the distance between the pads. The results agree with predictions of model of current injection into semiconductors with deep traps.

Keywords

EN

72.80.-r

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 88
• Issue: 4
• Pages: 803-806

Dates

published

1995-10

Contributors

author

J. Łusakowski

• Institute of Experimental Physics, University of Warsaw, Ηoża 69, 00-681 Warszawa, Poland

author

J. Szczytkowski

• Institute of Experimental Physics, University of Warsaw, Ηoża 69, 00-681 Warszawa, Poland

author

K. Szadkowski

• Institute of Experimental Physics, University of Warsaw, Ηoża 69, 00-681 Warszawa, Poland

author

E. Kamińska

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

A. Piotrowska

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

G. Karczewski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

T. Wojtowicz

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland