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1995 | 88 | 4 | 803-806
Article title

Non-Ohmic Conductivity of High Resistivity CdTe

Content
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Languages of publication
EN
Abstracts
EN
Conductivity measurements were carried out at room temperature on samples of nominally undoped Bridgman, bulk crystals and MBE-grown lay­ers of CdTe. The samples were equipped with indium contacts which made it possible to determine the voltage distribution along the path of the cur­rent flow. The results show that for both types of CdTe almost all of the applied voltage drops in the vicinity of the positively biased contact. The resistance of the samples was shown not to depend on the distance between the pads. The results agree with predictions of model of current injection into semiconductors with deep traps.
Keywords
EN
Publisher

Year
Volume
88
Issue
4
Pages
803-806
Physical description
Dates
published
1995-10
Contributors
  • Institute of Experimental Physics, University of Warsaw, Ηoża 69, 00-681 Warszawa, Poland
  • Institute of Experimental Physics, University of Warsaw, Ηoża 69, 00-681 Warszawa, Poland
author
  • Institute of Experimental Physics, University of Warsaw, Ηoża 69, 00-681 Warszawa, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z446kz
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