Crystallographic Properties of Bulk GaN Crystals Grown at High Pressure

• Authors: M. Leszczyński , I. Grzegory , M. Bockowski , J. Jun , S. Porowski , J. Jasiński , J.M. Baranowski
• Languages of publication: EN

Abstracts

EN

Gallium nitride bulk crystals grown at about 15 kbar and 1500 K have been examined by using the high resolution X-ray diffractometry. An anal­ysis of a set of the rocking curves of various Bragg reflections enabled us to estimate a dislocation density. For the crystals of dimensions lower than about 1 mm it is lower than 10^{-5} cm^{-2}. For bigger samples the crystallo­graphic quality worsens. With an application of the reciprocal lattice map­ping we could distinguish between internal strains and mosaicity which are both present in these crystals The results for the bulk crystals are compared with those for epitaxial layers.

Keywords

EN

61.72.Dd; 61.50.Cj

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 88
• Issue: 4
• Pages: 799-802

Dates

published

1995-10

Contributors

author

M. Leszczyński

• High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

author

I. Grzegory

• High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

author

M. Bockowski

• High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

author

J. Jun

• High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

author

S. Porowski

• High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

author

J. Jasiński

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

author

J.M. Baranowski

• Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland