Crystallization in InGaAs/InP Heterostructures with a Strong Disorder

• Authors: Gy. Kovács , G. Remenyi , G. Gombos , I G Savel'ev , A.M. Kreshchuk , N. Hegman , B. Pödör
• Languages of publication: EN

Abstracts

EN

Non-linear current-voltage characteristics were observed in the range of filling factors of 0.3 ≤ v ≤ 0.4 in a two-dimensional electron system in InGaAs/InP heterostructures with a strong disorder. The observations are explained qualitatively in terms of magnetic field induced localization and Wigner solidification.

Keywords

EN

73.20.Dx

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 88
• Issue: 4
• Pages: 783-786

Dates

published

1995-10

Contributors

author

Gy. Kovács

• Department of Low Temperature Physics, Roland Eötvös University, Puskin u. 5-7, 1088 Budapest, Hungary

author

G. Remenyi

• CNRS Centre de Recherches sur les très Basses Températures, 38042 Grenoble, France

author

G. Gombos

• Research Institute for Technical Physics of the Hungarian Academy of Sciences, P.O. Box 76, 1325 Budapest, Hungary

author

I G Savel'ev

• A.F. Ioffe Physico-Technical Institute of the Russian Academy of Sciences, 194021 St. Petersburg, Russia

author

A.M. Kreshchuk

• A.F. Ioffe Physico-Technical Institute of the Russian Academy of Sciences, 194021 St. Petersburg, Russia

author

N. Hegman

• Institute of Nuclear Research of the Hungarian Academy of Sciences, Ρ.O.Βox 51, 4001 Debrecen, Hungary

author

B. Pödör

• Research Institute for Technical Physics of the Hungarian Academy of Sciences, P.O. Box 76, 1325 Budapest, Hungary