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1995 | 88 | 4 | 783-786
Article title

Crystallization in InGaAs/InP Heterostructures with a Strong Disorder

Content
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Languages of publication
EN
Abstracts
EN
Non-linear current-voltage characteristics were observed in the range of filling factors of 0.3 ≤ v ≤ 0.4 in a two-dimensional electron system in InGaAs/InP heterostructures with a strong disorder. The observations are explained qualitatively in terms of magnetic field induced localization and Wigner solidification.
Keywords
EN
Publisher

Year
Volume
88
Issue
4
Pages
783-786
Physical description
Dates
published
1995-10
Contributors
author
  • Department of Low Temperature Physics, Roland Eötvös University, Puskin u. 5-7, 1088 Budapest, Hungary
author
  • CNRS Centre de Recherches sur les très Basses Températures, 38042 Grenoble, France
author
  • Research Institute for Technical Physics of the Hungarian Academy of Sciences, P.O. Box 76, 1325 Budapest, Hungary
author
  • A.F. Ioffe Physico-Technical Institute of the Russian Academy of Sciences, 194021 St. Petersburg, Russia
  • A.F. Ioffe Physico-Technical Institute of the Russian Academy of Sciences, 194021 St. Petersburg, Russia
author
  • Institute of Nuclear Research of the Hungarian Academy of Sciences, Ρ.O.Βox 51, 4001 Debrecen, Hungary
author
  • Research Institute for Technical Physics of the Hungarian Academy of Sciences, P.O. Box 76, 1325 Budapest, Hungary
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z441kz
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