Identification of Residual Impurities in Si-Doped MBE Grown GaAs

• Authors: M. Kaniewska , K. Regiński , J. Kaniewski , J. Muszalski , L. Ornoch , J. Adamczewska , J. Marczewski , M. Bugajski , E. Mizera
• Languages of publication: EN

Abstracts

EN

The changes of dopant vaporization enthalpy in GaAs:Si grown by mole­cular beam epitaxy revealed the presence of residual donors related to group VI elements. This has been confirmed by deep level transient spectroscopy studies of AlGaAs:Si layers grown in the same MBE system. It is argued that a commonly observed deep trap labelled E2 is probably related to Te, Se or S. The measurements have been performed on near-ideal Al Schottky barriers grown in situ by MBE.

Keywords

EN

71.55.Eq; 73.40.Νs; 73.20.Hb

• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 88
• Issue: 4
• Pages: 775-778

Dates

published

1995-10

Contributors

author

M. Kaniewska

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

K. Regiński

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

J. Kaniewski

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

J. Muszalski

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

L. Ornoch

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

J. Adamczewska

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

J. Marczewski

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

M. Bugajski

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

E. Mizera

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland