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1995 | 88 | 4 | 775-778
Article title

Identification of Residual Impurities in Si-Doped MBE Grown GaAs

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Languages of publication
EN
Abstracts
EN
The changes of dopant vaporization enthalpy in GaAs:Si grown by mole­cular beam epitaxy revealed the presence of residual donors related to group VI elements. This has been confirmed by deep level transient spectroscopy studies of AlGaAs:Si layers grown in the same MBE system. It is argued that a commonly observed deep trap labelled E2 is probably related to Te, Se or S. The measurements have been performed on near-ideal Al Schottky barriers grown in situ by MBE.
Keywords
Year
Volume
88
Issue
4
Pages
775-778
Physical description
Dates
published
1995-10
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z439kz
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