EN
A silicon-related local vibrational mode absorption in AlGaAs is reported for the first time. It consists of six peaks grouped around 450 cm^{-1} which form a distinct pattern. We believe that the new local vibrational mode absorption is a fingerprint of a single defect. Among the discussed microscopic structures the most plausible is a Si_{Ga}-Si_{As} pair complex with Si_{As} acceptor interacting with different Ga, Al nearest neighbour local environments.