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1995 | 88 | 4 | 755-758
Article title

Influence of Accumulation Layer on Rcsonant Tunneling in Double-Barrier Structures

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Languages of publication
EN
Abstracts
EN
The existing theory of the resonant tunneling phenomena in double-bar­rier structures takes into account the energy quantization in the well confined between the barriers only. In real tunneling structures there is another well, i.e., the accumulation well in the spacer region separating the highly doped region and the double-barrier structure. In the present paper the transmis­sion coefficient for double-barrier structures with an accumulation layer as a function of applied voltage has been derived. The experimentally observed oscillations of the tunneling current can be explained by the obtained quan­tization of the energy spectrum in the accumulation well.
Keywords
EN
Year
Volume
88
Issue
4
Pages
755-758
Physical description
Dates
published
1995-10
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z434kz
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