Interface and Surface Subsignals in Photoreflectance Spectra for GaAs/SI-GaAs Structures

• Authors: K. Jezierski , P. Sitarek , J. Misiewicz , M. Panek , B. Ściana , R. Korbutowicz , M. Tłaczała
• Languages of publication: EN

Abstracts

EN

Photoreflectance spectra were measured at room temperature for ener­gies in the vicinity of the E_{0} critical point for p-type as well as n-type doped GaAs/SI-GaAs structures. Depending on the doping concentration the ex­istence of two photoreflectance subsignals was observed; the first one arises from the surface space charge region while the second one from the interface region. The decomposition of photoreflectance spectrum into surface and in­terface subsignals was based on the photoreflectance measurements carried out for different wavelengths of the laser pump beam.

Keywords

EN

68.55.-a; 71.35.+z

• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 88
• Issue: 4
• Pages: 751-754

Dates

published

1995-10

Contributors

author

K. Jezierski

• Institute of Physics, Technical University, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland

author

P. Sitarek

• Institute of Physics, Technical University, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland

author

J. Misiewicz

• Institute of Physics, Technical University, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland

author

M. Panek

• Institute of Electron Technology, Technical University, Janiszewskiego 11, 50-370 Wrocław, Poland

author

B. Ściana

• Institute of Electron Technology, Technical University, Janiszewskiego 11, 50-370 Wrocław, Poland

author

R. Korbutowicz

• Institute of Electron Technology, Technical University, Janiszewskiego 11, 50-370 Wrocław, Poland

author

M. Tłaczała

• Institute of Electron Technology, Technical University, Janiszewskiego 11, 50-370 Wrocław, Poland