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1995 | 88 | 4 | 751-754
Article title

Interface and Surface Subsignals in Photoreflectance Spectra for GaAs/SI-GaAs Structures

Content
Title variants
Languages of publication
EN
Abstracts
EN
Photoreflectance spectra were measured at room temperature for ener­gies in the vicinity of the E_{0} critical point for p-type as well as n-type doped GaAs/SI-GaAs structures. Depending on the doping concentration the ex­istence of two photoreflectance subsignals was observed; the first one arises from the surface space charge region while the second one from the interface region. The decomposition of photoreflectance spectrum into surface and in­terface subsignals was based on the photoreflectance measurements carried out for different wavelengths of the laser pump beam.
Keywords
EN
Year
Volume
88
Issue
4
Pages
751-754
Physical description
Dates
published
1995-10
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z433kz
Identifiers
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