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1995 | 88 | 4 | 751-754

Article title

Interface and Surface Subsignals in Photoreflectance Spectra for GaAs/SI-GaAs Structures

Content

Title variants

Languages of publication

EN

Abstracts

EN
Photoreflectance spectra were measured at room temperature for ener­gies in the vicinity of the E_{0} critical point for p-type as well as n-type doped GaAs/SI-GaAs structures. Depending on the doping concentration the ex­istence of two photoreflectance subsignals was observed; the first one arises from the surface space charge region while the second one from the interface region. The decomposition of photoreflectance spectrum into surface and in­terface subsignals was based on the photoreflectance measurements carried out for different wavelengths of the laser pump beam.

Keywords

EN

Year

Volume

88

Issue

4

Pages

751-754

Physical description

Dates

published
1995-10

Contributors

author
  • Institute of Physics, Technical University, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland
author
  • Institute of Physics, Technical University, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland
author
  • Institute of Physics, Technical University, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland
author
  • Institute of Electron Technology, Technical University, Janiszewskiego 11, 50-370 Wrocław, Poland
author
  • Institute of Electron Technology, Technical University, Janiszewskiego 11, 50-370 Wrocław, Poland
  • Institute of Electron Technology, Technical University, Janiszewskiego 11, 50-370 Wrocław, Poland
author
  • Institute of Electron Technology, Technical University, Janiszewskiego 11, 50-370 Wrocław, Poland

References

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv88z433kz
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