Interface and Surface Subsignals in Photoreflectance Spectra for GaAs/SI-GaAs Structures

K. Jezierski; P. Sitarek; J. Misiewicz; M. Panek; B. Ściana; R. Korbutowicz; M. Tłaczała

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Journal

Acta Physica Polonica A

1995 | 88 | 4 | 751-754

Article title

Interface and Surface Subsignals in Photoreflectance Spectra for GaAs/SI-GaAs Structures

Authors

K. Jezierski , P. Sitarek , J. Misiewicz , M. Panek , B. Ściana , R. Korbutowicz , M. Tłaczała

Content

http://przyrbwn.icm.edu.pl/APP/PDF/88/a088z4p33.pdf [remote]

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Abstracts

Photoreflectance spectra were measured at room temperature for energies in the vicinity of the E_{0} critical point for p-type as well as n-type doped GaAs/SI-GaAs structures. Depending on the doping concentration the existence of two photoreflectance subsignals was observed; the first one arises from the surface space charge region while the second one from the interface region. The decomposition of photoreflectance spectrum into surface and interface subsignals was based on the photoreflectance measurements carried out for different wavelengths of the laser pump beam.

Keywords

68.55.-a 71.35.+z

Publisher

Institute of Physics, Polish Academy of Sciences

Journal

Acta Physica Polonica A

Year

1995

Volume

Issue

Pages

751-754

Physical description

Dates

published

1995-10

References

Document Type

Publication order reference

YADDA identifier

bwmeta1.element.bwnjournal-article-appv88z433kz

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