PL EN


Preferences help
enabled [disable] Abstract
Number of results
1995 | 88 | 4 | 747-750
Article title

Role of Arsenic Antisite Defect in Nonstoichiometric Gallium Arsenide

Content
Title variants
Languages of publication
EN
Abstracts
EN
Over the last few years there have been many studies of GaAs layers grown at low temperatures (180-300°C), so called LT GaAs. The interest in LT GaAs was motivated by the potential application of 600oC annealed LT GaAs in microwave and fast optoelectronic devices because of its short photocarrier lifetime, reasonable mobility and high resistivity. These proper­ties are associated with the nonstoichiometry of LT GaAs. Recently, studies of comparable material, nonstoichiometric GaAs produced by arsenic ion implantation have been initiated. There is still a strong controversy as to whether the arsenic antisite (As_{Ga}) or arsenic precipitates are responsible for unique electrical properties of both materials. This paper presents the results of structural and electrical studies of high energy As implanted GaAs and comments on relationships between the structure and the resulting electrical properties.
Keywords
EN
Year
Volume
88
Issue
4
Pages
747-750
Physical description
Dates
published
1995-10
References
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z432kz
Identifiers
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.