Influence of Growth Conditions on Exciton Properties in Thin Quantum Wells of GaAs/AlGaAs

• Authors: M. Godlewski , J.P. Bergman , P.O. Holtz , B. Monemar , M. Bugajski , K. Regiński , M. Kaniewska
• Languages of publication: EN

Abstracts

EN

Exciton properties in growth interrupted quantum wells of GaAs/AlGaAs are compared with those observed for structures grown with­out growth interruption during the molecular beam epitaxy process. We report observation of quasi-localized excitons in quantum well structures grown without growth interruptions. Quasi-localized excitons drift towards the states of a lower potential energy in the quantum well. For growth in­terrupted MBE structures islands with a constant quantum well thickness become large compared to the exciton radius. Free or lightly localized exci­tons are observed in that case.

Keywords

EN

78.55.Cr; 73.20.Fz; 71.35.+z

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 88
• Issue: 4
• Pages: 719-722

Dates

published

1995-10

Contributors

author

M. Godlewski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

J.P. Bergman

• Dept. of Physics and Measurement Technol., Linköping University, Sweden

author

P.O. Holtz

• Dept. of Physics and Measurement Technol., Linköping University, Sweden

author

B. Monemar

• Dept. of Physics and Measurement Technol., Linköping University, Sweden

author

M. Bugajski

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

K. Regiński

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

M. Kaniewska

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland