PL EN


Preferences help
enabled [disable] Abstract
Number of results
1995 | 88 | 4 | 719-722
Article title

Influence of Growth Conditions on Exciton Properties in Thin Quantum Wells of GaAs/AlGaAs

Content
Title variants
Languages of publication
EN
Abstracts
EN
Exciton properties in growth interrupted quantum wells of GaAs/AlGaAs are compared with those observed for structures grown with­out growth interruption during the molecular beam epitaxy process. We report observation of quasi-localized excitons in quantum well structures grown without growth interruptions. Quasi-localized excitons drift towards the states of a lower potential energy in the quantum well. For growth in­terrupted MBE structures islands with a constant quantum well thickness become large compared to the exciton radius. Free or lightly localized exci­tons are observed in that case.
Keywords
EN
Publisher

Year
Volume
88
Issue
4
Pages
719-722
Physical description
Dates
published
1995-10
Contributors
author
  • Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Dept. of Physics and Measurement Technol., Linköping University, Sweden
author
  • Dept. of Physics and Measurement Technol., Linköping University, Sweden
author
  • Dept. of Physics and Measurement Technol., Linköping University, Sweden
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
author
  • Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland
References
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv88z425kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.