Transition Metal-Related Centres in Silicon Studied by High-Resolution Deep Level Transient Spectroscopy

• Authors: L. Dobaczewski , P. Kamiński , R. Kozłowski , M. Surma
• Languages of publication: EN

Abstracts

EN

High-resolution Laplace-transform deep level transient spectroscopy tech­nique has been used to study a fine structure in the carrier emission process for transition metal- and thermal donors-related defects in silicon. For the case of the transition metal centres the method revealed the fine structure when the defect has a similar emission characteristics to other defects in the crystal. The method also demonstrated the complex emission process for the thermal donors.

Keywords

EN

73.40.Lq; 71.55.Cn; 68.55.Ln

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 1995
• Volume: 88
• Issue: 4
• Pages: 703-706

Dates

published

1995-10

Contributors

author

L. Dobaczewski

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

author

P. Kamiński

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

author

R. Kozłowski

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

author

M. Surma

• Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland